Semiconductor power device

Details Semiconductor power device Semiconductor power device

2006-06-06

2006-06-06

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S203000, C438S206000, C438S211000, C438S212000

Reexamination Certificate

active

07056779

ABSTRACT:
A p type base layer is formed in one surface region of an n type base layer. An n type emitter layer is formed in a surface region of the p type base layer. An emitter electrode is formed on the n type emitter layer and the p type base layer. A trench is formed in the n type emitter layer such that extends through the p type base layer to the n type base layer. A trench gate electrode is formed in the trench. The n type base layer has such a concentration gradient continuously changing in a thickness direction thereof that its portion in contact with the p type base layer has a lower concentration than its portion in contact with the p type collector layer, with the p type collector layer having a thickness of 1 μm or less.

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