Semiconductor package substrate having contact pad...

Details Semiconductor package substrate having contact pad... Semiconductor package substrate having contact pad...

2006-07-25

2006-07-25

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S614000, C438S108000

Reexamination Certificate

active

07081402

ABSTRACT:
A semiconductor package substrate and a method for fabricating the same are proposed. An insulating layer has a plurality of blind vias to expose inner traces underneath the insulating layer. A conductive film is formed on the insulating layer and over the bind vias. A first resist is formed on the conductive film, having openings to expose parts of the conductive film. A patterned trace layer including a plurality of contact pads is formed in the openings and the blind vias to form conductive vias, with at least one contact pad electrically connected to one conductive via. A second resist is formed on the patterned trace layer without covering the contact pads. A metal barrier layer is formed on the contact pads. Finally, the first and second resists and parts of the conductive film covered the first resist are removed.

REFERENCES:
patent: 5907786 (1999-05-01), Shinomiya
patent: 6566239 (2003-05-01), Makino et al.
patent: 2004/0000427 (2004-01-01), Wang et al.

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