Semiconductor package and method of forming similar...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S723000, C257S686000, C257S721000

Reexamination Certificate

active

08039302

ABSTRACT:
A semiconductor package has a first semiconductor die mounted on a substrate. A conductive via is formed through the substrate. A first RDL is formed on a first surface of the substrate in electrical contact with the conductive via and the first semiconductor die. A second RDL is formed on a second surface of the substrate opposite the first surface of the substrate die in electrical contact with the conductive via. A second semiconductor die can be mounted on the substrate and electrically connected to the second RDL. Bonding pads are formed over the first and second surfaces of the substrate in electrical contact with the first and second RDLs, respectively. The bonding pads on opposite surfaces of the substrate are aligned. Solder bumps or bond wires can be formed on the bonding pads. The semiconductor packages can be stacked and electrically connected through the aligned bonding pads.

REFERENCES:
patent: 7022399 (2006-04-01), Ogawa et al.
patent: 2005/0104181 (2005-05-01), Lee et al.
patent: 2006/0050486 (2006-03-01), Lee et al.
patent: 2006/0170098 (2006-08-01), Hsu
patent: 2007/0007641 (2007-01-01), Lee et al.
patent: 2008/0105984 (2008-05-01), Lee

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor package and method of forming similar... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor package and method of forming similar..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor package and method of forming similar... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4302550

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.