Semiconductor-on-insulator devices including alternating thin an

Details Semiconductor-on-insulator devices including alternating thin an Semiconductor-on-insulator devices including alternating thin an

1997-05-22

2000-02-01

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257347, 257348, 257349, 257351, 257352, 257353, 257354, 257355, H01L 2904

Patent

active

060206152

ABSTRACT:
A semiconductor-on-insulator (SOI) device is fabricated by forming spaced apart trenches in a first face of a semiconductor substrate. An insulating layer is formed on the first face of the semiconductor substrate, including on the trenches. A second substrate is bonded to the insulating layer, opposite the semiconductor substrate. The semiconductor substrate is thinned at a second face thereof which is opposite the first face, until a semiconductor film remains on the insulating layer, having alternating thin and thick film semiconductor regions on the insulating layer. Source/drains are formed in the thin film semiconductor regions. Insulated gates are formed on the thick film semiconductor regions, such that a respective insulated gate is located between adjacent source/drains. SOI devices which can suppress floating body effects and yet provide dense integration may thereby be formed.

REFERENCES:
patent: 4992846 (1991-02-01), Sakakibara et al.
Iwamatsu et al., "High-Speed 0.5 .mu.m SOI 1/8 Frequency Divider with Body-Fixed Structure for Wide Range of Applications", Abstracts of the 1995 International Conference on Solid State Devices and Materials, Osaka, 1995, pp. 575-577.

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