Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2005-12-19
2008-11-25
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S149000
Reexamination Certificate
active
07456080
ABSTRACT:
Methods and apparatus for producing a semiconductor on glass (SOG) structure include: subjecting an implantation surface of a donor semiconductor wafer to multiple ion implantation processes to create an exfoliation layer in the donor semiconductor wafer, wherein at least one of: (i) the type of ion, (ii) the dose, and/or (iii) the implantation energy of at least two of the multiple ion implantation processes differ from one another.
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Corning Incorporated
Jr. Carl Whitehead
McCall Shepard Sonya D
Schaeberle Timothy M.
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