Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2011-08-02
2011-08-02
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
Reexamination Certificate
active
07989359
ABSTRACT:
A semiconductor substrate having on its surface an electrode of a semiconductor device and a pattern unit is prepared. A copper plate is formed provided with a first principle surface having a bump and a second principle surface, opposite to the first principle surface, having a trench. By adjusting the position of the copper plate so that a pattern unit and the corresponding trench have a predetermined positional relation, the bump and the electrode are aligned, the first principle surface of the copper plate and a semiconductor substrate are pressure-bonded via an insulating layer, and the bump and the electrode become connected electrically while the bump penetrating the insulating layer. A predetermined rewiring pattern is formed on the side of the second principle surface.
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Okayama Yoshio
Yanase Yasuyuki
Fish & Richardson P.C.
Garber Charles D
Sanyo Electric Co,. Ltd.
Stevenson Andre′ C
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