Semiconductor memory with column line voltage sitting circuit

Details Semiconductor memory with column line voltage sitting circuit Semiconductor memory with column line voltage sitting circuit

1985-10-09

1988-02-23

Hecker, Stuart N.

Static information storage and retrieval

Read/write circuit

Precharge

365177, 365104, 365208, G11C 700

Patent

active

047275170

ABSTRACT:
A semiconductor memory is provided including a plurality of row lines, memory cells driven by selecting a row line, sense amplifiers connected to the memory cells via column lines, and a column line voltage setting circuit for setting a predetermined voltage on the column lines. The predetermined voltage is defined by a voltage necessary to activate semiconductor switch elements constituting the column line voltage setting circuit, and is made nearly equal to the threshold voltage of the sense amplifiers. Thus, a high-speed, low power consumption semiconductor memory can be realized.

REFERENCES:
patent: 3849673 (1974-11-01), Koo
patent: 4185321 (1980-01-01), Iwahashi et al.
patent: 4318014 (1982-03-01), McAlister et al.
patent: 4456979 (1984-06-01), Isogai
patent: 4482824 (1984-11-01), Tzeng

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