Semiconductor memory with boosted word line

Details Semiconductor memory with boosted word line Semiconductor memory with boosted word line

1985-02-08

1987-03-10

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Precharge

365204, G11C 700

Patent

active

046495231

ABSTRACT:
A dynamic random access memory has a row conductor boosted in excess of the power supply level during an initial portion of a memory cycle. The voltage is then clamped at the supply level during the middle portion of the cycle, and optionally boosted again during the refresh portion. This allows improved performance and reliability, especially in memories employing bit lines precharged to one-half the power supply level.

REFERENCES:
patent: 4291393 (1981-09-01), Wilson
patent: 4449207 (1984-05-01), Kung et al.
patent: 4503343 (1985-03-01), Ohuchi

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