Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-12-21
1994-07-26
Limanek, Robert
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
365 51, 365104, H01L 2968
Patent
active
053329171
ABSTRACT:
A semiconductor memory device having a NAND-type memory cell structure for preventing the occurrence of an electrical bridge resulting from impurity particles generated during a manufacturing process. The space between the word-line whereto a Vcc voltage is applied and the string selection line whereto a Vss voltage is applied and a space between the string selection line of the string selection transistor and the word-line of the cell transistor adjacent to the string selection transistor, are wider than that between the word-lines so as to prevent early stand-by current failure caused by the special stand-by conditions of a NAND-type memory cell. Therefore, the occurrence of a polysilicon bridge between the word-line and the string selection line due to impurity particles generated during the manufacturing process is prevented. As a result, a defectively manufactured chip can be resurrected by the data correction means provided within the memory device.
REFERENCES:
patent: 4481609 (1984-11-01), Higuchi et al.
patent: 4924438 (1990-05-01), Kobatake
patent: 5235200 (1993-08-01), Komori et al.
Chang Sok-guen
Choi Jung-dal
Lee Hyong-Gon
Donohoe Charles R.
Limanek Robert
Samsung Electronics Co,. Ltd.
Westerlund Robert A.
Whitt Stephen R.
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