Semiconductor memory having improved data readout scheme

Details Semiconductor memory having improved data readout scheme Semiconductor memory having improved data readout scheme

1990-06-26

1991-09-24

Clawson, Jr., Joseph E.

Static information storage and retrieval

Read/write circuit

Multiplexing

36518905, 365190, 365205, 3652335, G11C 706

Patent

active

050519557

ABSTRACT:
A semiconductor memory device capable of reading out stored data at high speed and with low power consumption includes a sense amplifier for amplifying a data signal stored in a selected memory cell, a data latch circuit for latching the output signal of the sense amplifier, a switching circuit for outputting the output signal of the data latch circuit, and an output circuit for receiving the output signal of the sense amplifier and the output signal of the switching circuit and generating a data output signal. It also includes at the power supply side, switching means for keeping the sense amplifier in an operative state as long as data signal is amplified in response to a sense enable signal.

REFERENCES:
patent: 4825110 (1989-04-01), Yamaguchi et al.

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