Semiconductor memory having charge trapping memory cells and...

Details Semiconductor memory having charge trapping memory cells and... Semiconductor memory having charge trapping memory cells and...

2008-04-28

2010-02-16

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S264000, C438S259000

Reexamination Certificate

active

07662687

ABSTRACT:
A semiconductor memory having charge trapping memory cells and fabrication method thereof. The direction of current flow of each channel region of the memory transistors runs transversely with respect to the relevant word line, the bit lines are arranged on the top side of the word lines and in a manner electrically insulated from the latter, and electrically conductive local interconnects of source-drain regions are present, which are arranged in sections in interspaces between the word lines and in a manner electrically insulated from the latter and connected to the bit lines, wherein gate electrodes are arranged in trenches at least partly formed in the memory substrate.

REFERENCES:
patent: 6239465 (2001-05-01), Nakagawa
patent: 6794249 (2004-09-01), Palm et al.

Affiliated with

Also associated with

Rating

Semiconductor memory having charge trapping memory cells and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory having charge trapping memory cells and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory having charge trapping memory cells and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4174190