Semiconductor memory having channel regions at sides of a...

Details Semiconductor memory having channel regions at sides of a... Semiconductor memory having channel regions at sides of a...

2005-06-07

2005-06-07

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S906000

Reexamination Certificate

active

06903414

ABSTRACT:
Semiconductor memory and method for fabricating the same, the semiconductor memory including a cell transistor having a trench region formed in a semiconductor substrate and channel regions at sides of the trench region, source/drain regions formed in a bottom of the trench region and in a surface of the substrate adjacent to the trench region and in contact with the channel region, and gate electrodes at sides of the trench insulated from the trench wall.

REFERENCES:
patent: 5877522 (1999-03-01), Kasai
patent: 5977589 (1999-11-01), Schloesser et al.
patent: 6022779 (2000-02-01), Shin et al.
patent: 6075265 (2000-06-01), Goebel et al.
patent: 6096598 (2000-08-01), Furukawa et al.
patent: 6130449 (2000-10-01), Matsuoka et al.
patent: 6157069 (2000-12-01), Shin et al.
patent: 6172391 (2001-01-01), Goebel et al.

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