Static information storage and retrieval – Systems using particular element – Semiconductive
Patent
1994-12-01
1995-12-19
Fears, Terrell W.
Static information storage and retrieval
Systems using particular element
Semiconductive
36523006, G11C 1300
Patent
active
054774845
ABSTRACT:
A semiconductor memory comprises a memory cell array including a plurality of digit lines, a plurality of word lines, a plurality of memory cells located at intersections between the digit lines and the word lines, and a column selection circuit for selecting one digit line from the digit lines in accordance with a selection signal. A sense amplifier includes a first P-MOS transistor for precharging a digit line selected by the column selection circuit, an inverting amplifier having an input connected to receive a signal on the selected digit line, and a second P-MOS transistor having a gate and a drain connected to an output and an input of the inverting amplifier, respectively. A gate-grounded third P-MOS transistor maintained in a conductive condition is connected at its source to a voltage supply voltage and at its drain connected to a source of the P-MOS second transistor. The third P-MOS transistor has an on-resistance larger than that of the second transistor and substantially the same current driving capability as that of the second transistor.
REFERENCES:
patent: 4982363 (1991-01-01), Sood
patent: 5170374 (1992-12-01), Shimohigashi et al.
patent: 5303194 (1994-04-01), Suzuki
Fears Terrell W.
NEC Corporation
LandOfFree
Semiconductor memory having a high speed sense amplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory having a high speed sense amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory having a high speed sense amplifier will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-996905