Semiconductor memory devices including precharge circuit and...

Static information storage and retrieval – Read/write circuit – Precharge

Reexamination Certificate

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C365S189050

Reexamination Certificate

active

11431536

ABSTRACT:
A precharge circuit of a semiconductor memory device may include a precharge controller, a first precharge unit and a second precharge unit. The precharge controller may enable a first control signal in a precharge mode for a first operation, and may enable a second control signal in a precharge mode for a second operation. The first precharge unit may precharge a pair of I/O lines to a first voltage in response to the first control signal in the precharge mode for the first operation. The second precharge unit may precharge the pair of I/O lines to a second voltage lower than the first voltage in response to the second control signal in the precharge mode for the second operation.

REFERENCES:
patent: 5790466 (1998-08-01), Hotta
patent: 5798975 (1998-08-01), Buttner et al.
patent: 5825710 (1998-10-01), Jeng et al.
patent: 7130232 (2006-10-01), Kim et al.
patent: 2007/0070745 (2007-03-01), Versen et al.
patent: 2003-151276 (2003-05-01), None
patent: 10-339423 (2002-05-01), None
patent: 10-2004-0076729 (2004-09-01), None

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