Semiconductor memory devices and methods of fabricating the...

Details Semiconductor memory devices and methods of fabricating the... Semiconductor memory devices and methods of fabricating the...

2007-09-25

2007-09-25

Hoang, Quoc (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S321000, C257SE21680

Reexamination Certificate

active

11233334

ABSTRACT:
There are provided highly integrated semiconductor memory devices being suitable for storing two bits of data in one unit cell, and methods of fabricating the same. The unit cell of the semiconductor memory device includes a semiconductor substrate and source and drain regions formed in the semiconductor substrate and spaced from each other. First and second data lines are formed to run across over a channel region between the source and drain regions and to be disposed adjacent to the source and drain regions respectively. A first MTJ barrier layer pattern is disposed between the first data line and the channel region. A second MTJ barrier layer pattern is disposed between the second data line and the channel region. A first floated storage node is disposed between the first MTJ barrier layer pattern and the channel region. A second floated storage node is disposed between the second MTJ barrier layer pattern and the channel region. The unit cell of the semiconductor memory device further includes a word line disposed to run across over the first and second data lines, and disposed to cover both sidewalls of the first and second MTJ barrier layer patterns and both sidewalls of the first and second storage nodes.

REFERENCES:
patent: 5952692 (1999-09-01), Nakazato et al.
patent: 6475857 (2002-11-01), Kim et al.
patent: 10-2004-0040691 (2004-05-01), None

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