Semiconductor memory devices and methods for making the same

Details Semiconductor memory devices and methods for making the same Semiconductor memory devices and methods for making the same

2006-04-25

2006-04-25

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S769000, C438S762000

Reexamination Certificate

active

07033956

ABSTRACT:
Methods for making memory devices are disclosed for forming germanium nanocrystals in an oxynitride layer. The method includes: forming a first dielectric layer over a substrate; forming an oxynitride layer containing germanium nanocrystals over the first dielectric layer; forming a second dielectric layer over the oxynitride layer; forming a gate over the second dielectric layer; and providing source, drain, and channel regions in the substrate. In one example, the channel region is positioned to correspond to at least a portion of the gate.

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