Semiconductor memory devices and methods for fabricating the...

Details Semiconductor memory devices and methods for fabricating the... Semiconductor memory devices and methods for fabricating the...

2007-01-16

2007-01-16

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21209

Reexamination Certificate

active

11243752

ABSTRACT:
Methods and structures are provided for a dual-bit EEPROM semiconductor device. The dual-bit memory device comprises a semiconductor substrate, a tunnel oxide disposed on the semiconductor substrate and first and second spaced apart floating gates that are disposed on the tunnel oxide. An interlayer dielectric layer contacts the tunnel oxide layer at a position between the first and second spaced apart floating gates and electrically isolates the first and second spaced apart floating gates. A control gate contacts the interlayer dielectric layer between the first and second spaced apart floating gates.

REFERENCES:
patent: 7041572 (2006-05-01), Yang et al.

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