Semiconductor memory device with surface strap and method of...

Details Semiconductor memory device with surface strap and method of... Semiconductor memory device with surface strap and method of...

2005-03-15

2005-03-15

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S618000, C257S327000

Reexamination Certificate

active

06867450

ABSTRACT:
A semiconductor memory device includes memory cells each having a trench capacitor and a fin-gate-type MOSFET that selects the trench capacitor. One of activation regions of the MOSFET, which are provided in a pillar, and one of electrodes of the trench capacitor are electrically connected by a surface strap. The surface strap contacts an upper surface and an upper part of a side wall of the pillar.

REFERENCES:
patent: 6664582 (2003-12-01), Fried et al.
patent: 20020011612 (2002-01-01), Hieda
patent: 20040150037 (2004-08-01), Katsumata et al.
patent: 20040150071 (2004-08-01), Kondo et al.
patent: 2002-118255 (2002-04-01), None

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