Semiconductor memory device with stable auto-precharge...

Details Semiconductor memory device with stable auto-precharge... Semiconductor memory device with stable auto-precharge...

2006-06-06

2006-06-06

Lam, David (Department: 2827)

Static information storage and retrieval

Read/write circuit

Precharge

C365S230030, C365S233100, C365S194000

Reexamination Certificate

active

07057953

ABSTRACT:
A semiconductor memory device having a plurality of banks for stably performing a write with auto-precharge (WRA) command or a read with auto-precharge (RDA) command, including: a bank signal generation unit for generating an interrupt bank signal based on a bank address signal and a column address strobe (CAS) signal; a data access period detection unit for generating a data access period signal based on the CAS signal and a bit line disable signal; and a masking signal generation unit for generating a masking signal in order to controlling a logic level of an auto-precharge signal based on the data access period signal and the interrupt bank signal.

REFERENCES:
patent: 6483579 (2002-11-01), Koshikawa

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