Static information storage and retrieval – Read/write circuit – Multiplexing
Reexamination Certificate
2005-07-19
2005-07-19
Tran, M. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Multiplexing
C365S233100
Reexamination Certificate
active
06920068
ABSTRACT:
A semiconductor memory device including a main amplifier for amplifying an output from a bit line sensing amplifier and outputting the amplified output to a first data line; an input/output multiplexer connected to the first data line; a repeater connected to the first data line; an input/output write unit for receiving a data to be written and outputting the data to a second data line; and a write driver connected to the second data line for transferring the data on the second data line to the bit line sensing amplifier.
REFERENCES:
patent: 5592434 (1997-01-01), Iwamoto et al.
patent: 5594704 (1997-01-01), Konishi et al.
patent: 5831924 (1998-11-01), Nitta et al.
patent: 5867446 (1999-02-01), Konishi et al.
patent: 5956285 (1999-09-01), Watanabe et al.
patent: 6065092 (2000-05-01), Roy
patent: 6091659 (2000-07-01), Watanabe et al.
patent: 6327214 (2001-12-01), Yoon et al.
patent: 6378102 (2002-04-01), Watanabe et al.
patent: 6449198 (2002-09-01), Hamade et al.
patent: 6859414 (2005-02-01), Koo
patent: 08-077771 (1996-03-01), None
patent: 08-221981 (1996-08-01), None
patent: 09-288888 (1997-11-01), None
patent: 11-317091 (1999-11-01), None
patent: 2000-076858 (2000-03-01), None
patent: 2000-090670 (2000-03-01), None
patent: 2001-035154 (2001-02-01), None
patent: 2001-126470 (2001-05-01), None
patent: 2001-155485 (2001-06-01), None
patent: 2002-245792 (2002-08-01), None
Hynix / Semiconductor Inc.
Tran M.
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