Semiconductor memory device with increased adaptability

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

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365104, G11C 700

Patent

active

046944311

ABSTRACT:
A semiconductor memory device having a PROM with an output register has an initialize input terminal and a programmable initial data memory cell for each bit. When an initialize input signal is supplied to the initialize input terminal, the output register is cleared or present in accordance with the content of the initial data memory cell, whereby the reduction of adaptability caused by a decrease in input terminals can be prevented, a circuit arrangement can be simplified, and a high degree of integration and high-speed operation can be achieved.

REFERENCES:
patent: 4347584 (1982-08-01), Fukushima et al.

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