Semiconductor memory device with improved current control throug

Details Semiconductor memory device with improved current control throug Semiconductor memory device with improved current control throug

1998-01-06

1999-11-16

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438232, 438286, 438301, 438525, 257286, 257305, H01L 2980

Patent

active

059857072

ABSTRACT:
A semiconductor memory device and a fabrication method thereof include formation of surplus gates connected to a cell node of a gate edge region, located at a cell node side of a SRAM access transistor, and to the gate of a driving transistor located at the opposite side thereof. The present invention prevents silicon loss of the substrate caused by the formation of a buried contact in the conventional device, secures an operational stability of the memory cell by controlling differently the current flow of an access transistor in accordance with the condition of the cell node (for example, low level or high level), and facilitates an interconnection in the cell since the gate of a side transistor is used as a substitute for another interconnection (for example, a wiring) when realizing a SRAM. Further, during a reading operation, since the resistance of the n+ source region of the cell node of the access transistor is larger than that of the drain region connected to the bit line, the current driving ability is made lower, and the operational stability is enhanced.

REFERENCES:
patent: 4852060 (1989-07-01), Rockett, Jr.
patent: 5053349 (1991-10-01), Matsuoka
patent: 5070032 (1991-12-01), Yuan et al.
patent: 5153852 (1992-10-01), Terrell
patent: 5220182 (1993-06-01), Matsuoka et al.
patent: 5285096 (1994-02-01), Ando et al.
patent: 5386379 (1995-01-01), Ali-Yania et al.
patent: 5482895 (1996-01-01), Hayashi et al.
patent: 5621232 (1997-04-01), Ohno

Affiliated with

Also associated with

Rating

Semiconductor memory device with improved current control throug does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device with improved current control throug, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device with improved current control throug will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1323999