Semiconductor memory device with dual storage node and...

Static information storage and retrieval – Systems using particular element – Ferroelectric

Reexamination Certificate

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Details

C365S185180, C365S185240, C257S296000

Reexamination Certificate

active

07613027

ABSTRACT:
A semiconductor memory device with a dual storage node structure as well as methods of fabricating and operating such a device are provided. The semiconductor memory device includes a substrate, a first transistor formed on the substrate, a first storage node connected to a source region of the first transistor, a second storage node connected to a drain region of the first transistor, and a plate line commonly contacting the first storage node and the second storage node.

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patent: 10-2001-0004385 (2001-01-01), None
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Korean Office Action dated Sep. 22, 2006.

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