Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2007-10-10
2009-11-03
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S185180, C365S185240, C257S296000
Reexamination Certificate
active
07613027
ABSTRACT:
A semiconductor memory device with a dual storage node structure as well as methods of fabricating and operating such a device are provided. The semiconductor memory device includes a substrate, a first transistor formed on the substrate, a first storage node connected to a source region of the first transistor, a second storage node connected to a drain region of the first transistor, and a plate line commonly contacting the first storage node and the second storage node.
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Korean Office Action dated Sep. 22, 2006.
Koo Bon-jae
Park Yoon-dong
Park Young-soo
Shin Sang-min
Auduong Gene N.
Harness Dickey & Pierce
Samsung Electronics Co,. Ltd.
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