Semiconductor memory device that can carry out read disturb test

Static information storage and retrieval – Read/write circuit – Testing

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36518911, G11C 700

Patent

active

059177667

ABSTRACT:
A semiconductor memory device that operates in various modes such as in a normal operation mode and a disturb accelerated test mode in which two word lines are activated simultaneously, includes a boosting power supply circuit, a boosted voltage supply line, and an input terminal connected to the boosted voltage supply line. In a disturb accelerated test mode or in a burn-in test mode, an external voltage is supplied from an external power supply to the input terminal. A word line is reliably boosted in voltage in a disturb accelerated test mode.

REFERENCES:
patent: 4999813 (1991-03-01), Ohtsuka et al.
patent: 5388077 (1995-02-01), Sanada
patent: 5424990 (1995-06-01), Ohsawa
patent: 5504715 (1996-04-01), Lee et al.
patent: 5568436 (1996-10-01), Furuyama

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