Semiconductor memory device, semiconductor device, and...

Details Semiconductor memory device, semiconductor device, and... Semiconductor memory device, semiconductor device, and...

2006-08-15

2008-10-07

Nguyen, Ha (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S301000, C438S303000, C438S286000, C257SE21651

Reexamination Certificate

active

07432165

ABSTRACT:
Disclosed are a semiconductor memory device, a semiconductor device, and a method for production thereof. The semiconductor memory device and semiconductor device do not need for a distance for alignment of lithography to make the contact hole with lithography to form the gate electrode. Hence the resulting devices have a reduced area for the cell array. The semiconductor memory device is composed of a substrate having trenches formed side by side, a plate electrode which is formed to a prescribed depth from the surface of the inner wall of the trench, a capacitor insulating film which covers the surface of the inner wall of the trench, a memory node electrode MN which fills the trench, with the capacitor insulating film interposed between them, and a memory node contact plug which is buried in a contact hole which is so made as to reach the memory node electrode from the surface of the semiconductor layer. A metallized region is integrally formed to connect at least part of the surface of the semiconductor layer and at least part of the surface of the contact plug to each other.

REFERENCES:
patent: 6168958 (2001-01-01), Gardner et al.
patent: 6291847 (2001-09-01), Ohyu et al.
patent: 6462369 (2002-10-01), Matsufusa
patent: 7151028 (2006-12-01), Fang et al.

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