Semiconductor memory device regulable in access time after fabri

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

36518901, 36523008, 307443, G11C 700, G11C 1140

Patent

active

053031881

ABSTRACT:
An electrically programmable read only memory device stores data bits each in the form of either high or low threshold level of a memory cell, and an accessed data bit is transferred from a selected memory cell to an output data buffer unit for delivery to a destination, wherein a plurality of output data buffer circuits are provided in the output data buffer unit and are selectively used for the data delivery depending upon current driving capability expected by a customer.

REFERENCES:
patent: 4928265 (1990-05-01), Higuchi et al.
patent: 4985644 (1991-01-01), Okihara et al.
patent: 5073872 (1991-12-01), Masuda et al.
patent: 5151621 (1992-09-01), Goto
patent: 5245573 (1993-09-01), Nakaora

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device regulable in access time after fabri does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device regulable in access time after fabri, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device regulable in access time after fabri will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2104551

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.