Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-06-14
2010-06-08
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S324000
Reexamination Certificate
active
07732855
ABSTRACT:
A semiconductor memory device may include a semiconductor substrate, at least one control gate electrode, at least one storage node layer, at least one tunneling insulating layer, at least one blocking insulating layer, and/or first and second channel regions. The at least one control gate electrode may be recessed into the semiconductor substrate. The at least one storage node layer may be between a sidewall of the at least one control gate electrode and the semiconductor substrate. The at least one tunneling insulating layer may be between the at least one storage node layer and the at least one control gate electrode. The at least one blocking insulating layer may be between the storage node layer and the control gate electrode. The first and second channel regions may be between the at least one tunneling insulating layer and the semiconductor substrate to surround at least a portion of the sidewall of the control gate electrode and/or may be separated from each other.
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Choi Sang-moo
Hwang In-jun
Park Ju-hee
Park Sang-jin
Park Yoon-dong
Harness & Dickey & Pierce P.L.C.
Ida Geoffrey
Le Thao X
Samsung Electronics Co,. Ltd.
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