Semiconductor memory device including precharge/equalization cir

Details Semiconductor memory device including precharge/equalization cir Semiconductor memory device including precharge/equalization cir

1987-06-10

1990-01-09

Gossage, Glenn

Static information storage and retrieval

Read/write circuit

Precharge

365190, G11C 700, G11C 1140

Patent

active

048932787

ABSTRACT:
The semiconductor memory has a memory array comprising word lines, complementary data lines orthogonal to the word lines, and static memory cells disposed at intersections of the word lines and between a complementary pair of data lines in a grid-like memory matrix arrangement of rows and columns. There is also included a plurality of precharge circuits for selectively setting one of two adjacent complementary data line pairs to a first voltage and the other one of the two complementary data line pairs to a second voltage, different than the first voltage, and further including equalization circuitry, thereby establishing a short-circuit between the complementary data lines of each pair of complementary data lines.

REFERENCES:
patent: 3949385 (1976-04-01), Sonoda

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