Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2008-04-04
2010-06-29
Mai, Son L (Department: 2827)
Static information storage and retrieval
Read/write circuit
Testing
C365S189070, C365S200000, C714S718000
Reexamination Certificate
active
07746712
ABSTRACT:
Provided are a semiconductor memory device having a post package repair control circuit and a post package repair method. In the semiconductor memory device and the post package repair method, in a post package repair mode, a second memory bank is used as a fail bit map memory for storing failed bit information regarding a first memory bank, and the first memory bank is used as a fail bit map memory for storing failed bit information regarding the second memory bank.
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Jang Hyun-soon
Kang Jae-sung
Kwak Byung-heon
Lim Hyun-tae
Ryu Sang-joon
Mai Son L
Mills & Onello LLP
Samsung Electronics Co,. Ltd.
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