Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Reexamination Certificate
2007-12-31
2010-02-23
Nguyen, Viet Q (Department: 2827)
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
C365S189060, C365S189110, C326S083000, C326S085000, C326S087000
Reexamination Certificate
active
07668021
ABSTRACT:
A semiconductor memory device has a data output device. The data output device is provided with a slew rate control unit for detecting the number of transitions of a plurality of output data to output slew rate control information; and an output driving unit for driving the plurality of output data with a pull-up drivability and a pull-down drivability adjusted based on the slew rate control information.
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Korean Office Action, with English Translation, issued in Korean Patent Application No. KR 10-2007-0063308 dated on Jun. 26, 2008.
Hynix / Semiconductor Inc.
IP & T Law Firm PLC
Nguyen Viet Q
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