Semiconductor memory device including floating body...

Static information storage and retrieval – Read/write circuit – Data refresh

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07924644

ABSTRACT:
A semiconductor memory device includes a memory cell array including a plurality of memory cells, where each memory cell includes a transistor with a floating body region in which majority carriers are accumulated in a steady state. In write and read operations, a first data state corresponding to the steady state is written to and read from at least one selected memory cell of the memory cell array by supplying a first bipolar current through the at least one selected memory cell, and a second data state is written to and read from the at least one selected memory cell by supplying a second bipolar current which is smaller than the first bipolar current through the at least one selected memory cell. In a refresh operation, memory cells of the memory cell array storing the second data state are refreshed.

REFERENCES:
patent: 5146152 (1992-09-01), Jin et al.
patent: 5998840 (1999-12-01), Kim
patent: 6055183 (2000-04-01), Ho et al.
patent: 6084812 (2000-07-01), Joo
patent: 6147903 (2000-11-01), Takahashi
patent: 6475890 (2002-11-01), Yu
patent: 6567330 (2003-05-01), Fujita et al.
patent: 6621725 (2003-09-01), Ohsawa
patent: 6697909 (2004-02-01), Wang et al.
patent: 6826074 (2004-11-01), Yamauchi
patent: 6861689 (2005-03-01), Burnett
patent: 6882008 (2005-04-01), Ohsawa
patent: 6982918 (2006-01-01), Fazan et al.
patent: 7064973 (2006-06-01), Peng et al.
patent: 7075151 (2006-07-01), Shino
patent: 7098507 (2006-08-01), Tang et al.
patent: 7154788 (2006-12-01), Takemura et al.
patent: 7187581 (2007-03-01), Ferrant et al.
patent: 7233536 (2007-06-01), Ogiwara et al.
patent: 7301803 (2007-11-01), Okhonin et al.
patent: 7326634 (2008-02-01), Lindert et al.
patent: 7436724 (2008-10-01), Nandi
patent: 2002/0057622 (2002-05-01), Sim
patent: 2003/0231524 (2003-12-01), Ohsawa
patent: 2005/0026354 (2005-02-01), Bhattacharyya
patent: 2005/0068807 (2005-03-01), Ohsawa
patent: 2005/0180214 (2005-08-01), Park
patent: 2006/0081851 (2006-04-01), Ono
patent: 2006/0092739 (2006-05-01), Fujita et al.
patent: 2006/0131650 (2006-06-01), Okhonin et al.
patent: 2006/0138558 (2006-06-01), Morikado
patent: 2006/0208301 (2006-09-01), Shino
patent: 2007/0007574 (2007-01-01), Ohsawa
patent: 2007/0013007 (2007-01-01), Kusunoki et al.
patent: 2007/0023809 (2007-02-01), Villaret et al.
patent: 2007/0058427 (2007-03-01), Okhonin et al.
patent: 2007/0091703 (2007-04-01), Nishimura et al.
patent: 2007/0097751 (2007-05-01), Popoff et al.
patent: 2007/0158727 (2007-07-01), Song et al.
patent: 2007/0285982 (2007-12-01), Carman
patent: 2008/0130376 (2008-06-01), Park et al.
patent: 2008/0278473 (2008-11-01), An
patent: 2008/0284493 (2008-11-01), Baek et al.
patent: 04-366492 (1992-12-01), None
patent: 2003-031696 (2003-01-01), None
patent: 2003-068877 (2003-03-01), None
patent: 2003-132682 (2003-05-01), None
patent: 2006085812 (2006-03-01), None
patent: 2006-107560 (2006-04-01), None
patent: 2006-156986 (2006-06-01), None
patent: 2006-179746 (2006-07-01), None
patent: 2006-260722 (2006-09-01), None
patent: 2007-018588 (2007-01-01), None
patent: 2007-036257 (2007-02-01), None
patent: 2007-073680 (2007-03-01), None
patent: 10-1994-0003406 (1994-02-01), None
patent: 100248507 (1999-12-01), None
patent: 1020020014757 (2002-02-01), None
patent: 1020030015823 (2003-02-01), None
patent: 100429868 (2004-04-01), None
patent: 1020050071665 (2005-07-01), None
patent: 1020060104794 (2006-10-01), None
patent: 100660910 (2006-12-01), None
patent: 100673012 (2007-01-01), None
patent: 100682537 (2007-02-01), None
patent: 100699890 (2007-03-01), None
patent: 1020080047105 (2008-05-01), None
patent: 1020080058806 (2008-06-01), None
Ohsawa et al., “Memory Design Using a One-Transistor Gain Cell on SOI,” IEEE Journal of Solid-State Circuits, vol. 37, No. 11, Nov. 2002, pp. 1510-1522.
Ota et al., “Novel Locally Strained Channel Technique for High Performance 5nm CMOS,” IEEE 2002, pp. 27-30.
Cho et al., “A 6F2 DRAM Technology in 60nm era Gigabit Densities,” 2005 Symposium on VLSI Technology Digest of Technical Papers, pp. 36-37.
Ohsawa et al., “A Memory Using One-Transistor Gain Cell on SOI(FBC) with Performance Suitable for Embedded DRAM's,” 2003 Symposium on VLSI Circuits Digest of Technical Papers, pp. 93-96.
Jeong et al., “A Capacitor-less IT DRAM Cell Based on a Surrounding Gate MOSFET with a Vertical Channel,” 2005 IEEE Silicon Nanoelectronics Workshop, pp. 92-93.
“Capacitor-less 1T DRAM cell structure for sensing margin and retention time enhancement,” 2007 The Korean Conference on Semiconductors.
Oh et al., “Floating Body DRAM Characteristics of Silicon-On-ONO (SOONO) Devices for System-on-Chip (SoC) Applications,” 2007 Symposium on VLSI Technology Digest of Technical Papers, pp. 168-169.
ISSCC 2005, Session 25, Dynamic Memory, “An 18.5ns 128Mb SOI DRAM with a Floating Body Cell,” pp. 458-459, 609.
Non-Final Office Action dated Oct. 27, 2010, from U.S. Appl. No. 12/171,406, filed Jul. 11, 2008; Inventor Ki-Whan Song.
Takashi Ohsawa et al., Memory Design Using a One-Transistor Gain Cell on SOI; IEEE Journal of Solid-State Circuits, vol. 37, No. 11, Nov. 2002; pp. 1510-1522.
Ki-Whan Song et al., 55 nm Capacitor-less 1T DRAM Cell Transistor with Non-Overlap Structure.
Michel Bron et al., A 2ns Read Latency, 4MB Embedded Z-RAM Floating Body Memory Macro in 45nm SOI Technology.
U.S. Appl. No. 12/171,406, filed Jul. 11, 2008; Inventor—Ki-Whan Song et al.
U.S. Appl. No. 12/654,283, filed Dec. 16, 2009; Inventor—Ki-Whan Song et al.
U.S. Appl. No. 12/285,520, filed Oct. 8, 2008; Inventor—Jin-Young Kim.
Office Action dated Aug. 18, 2010 in U.S. Appl. No. 12/285,520.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor memory device including floating body... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device including floating body..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device including floating body... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2715568

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.