Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch
Patent
2000-01-07
2000-12-26
Nguyen, Tan T.
Static information storage and retrieval
Read/write circuit
Having particular data buffer or latch
36518911, G11C 700
Patent
active
061669660
ABSTRACT:
A semiconductor memory device includes an output control signal generation circuit for generating an output control signal to designate initiation of data output according to an external control signal, and a boosting circuit boosting an external power supply voltage. Each of the plurality of output control circuits generates an output permit signal with the output level of the boosting circuit as the activation level in response to activation of an output control signal. The output permit signals are transmitted to a plurality of output circuits by a corresponding one of a plurality of signal lines. Each of the plurality of output circuits drives the potential of a corresponding output terminal according to a read out data signal and an output permit signal.
REFERENCES:
patent: 4882507 (1989-11-01), Tatsumi et al.
patent: 5663912 (1997-09-01), Yamauchi
patent: 5831908 (1998-11-01), Tsuji
patent: 5949721 (1999-09-01), Kwon et al.
patent: 5959900 (1999-09-01), Matsubara
patent: 6052329 (2000-04-01), Nishino et al.
Ikeda Yutaka
Maruyama Yukiko
Yamasaki Kyoji
Mitsubihsi Denki Kabushiki Kaisha
Nguyen Tan T.
LandOfFree
Semiconductor memory device including data output circuit capabl does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor memory device including data output circuit capabl, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device including data output circuit capabl will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1002330