Semiconductor memory device including 4TSRAMs

Details Semiconductor memory device including 4TSRAMs Semiconductor memory device including 4TSRAMs

2007-02-20

2007-02-20

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Flip-flop

C365S156000, C365S230060, C257S135000

Reexamination Certificate

active

10878050

ABSTRACT:
Disclosed is a method of improving stability of a memory cell in read mode in an SRAM including a memory cell comprising two access MOS transistors and two drive MOS transistors. The magnitude of voltage between gate and source of an access transistor of a memory cell connected to a selected word line is controlled to be smaller than a power-supply voltage by controlling the voltage of selected word line WL in read mode.

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