Semiconductor memory device having word line conductors provided

Details Semiconductor memory device having word line conductors provided Semiconductor memory device having word line conductors provided

1999-06-18

2000-05-09

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438253, 438241, 438396, 257296, 257306, H01L 218242

Patent

active

06060350&

ABSTRACT:
A semiconductor memory device has word line conductor films, bit line conductor films transverse to the word line conductor films and memory cells provided at intersections between the word line conductor films and bit line conductor films. Each memory cell has a transistor structure formed at a surface portion of a semiconductor substrate and a capacitor structure formed over the semiconductor substrate. The word line conductor films are formed at a level lower than the capacitor structures of the memory cells to improve the resolution of patterns for the semiconductor memory device.

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Japanese Journal, "Nikkei Micro-Devices", Aug. 1994, pp. 32-37, Nikkei Business Publications, Inc.

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