Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-01-15
2008-01-15
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257S297000, C257S298000, C257S299000, C257S300000, C257S304000, C257S306000, C257S307000, C257S308000, C257S309000, C257S311000, C257S350000, C257S351000, C257S358000, C257S360000, C257S363000, C257S379000, C257S380000, C257S381000, C257S516000, C257S533000, C257S536000, C257S537000, C257S538000, C257S539000, C257S540000, C257S541000, C257S542000, C257S543000, C257S571000, C257S572000, C257S577000, C257S580000, C257S904000
Reexamination Certificate
active
07319254
ABSTRACT:
A semiconductor device having resistors in a peripheral area and fabrication method thereof are provided. A mold layer is formed on a semiconductor substrate. The mold layer is patterned to form first molding holes and a second molding hole in the mold layer. A storage node layer is formed on the mold layer as well as in the first and second molding holes. The storage node layer is patterned to form storage nodes in the first molding holes and a portion of a resistor in the second hole.
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English language of Abstract for Korean Patent Publication No. 2001-0114003.
English language of Abstract for Japanese Patent Publication No. 2000-294749.
Kim Byung-seo
Kwak Dong-Hwa
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
Soward Ida M.
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