Static information storage and retrieval – Read/write circuit – Bad bit
Reexamination Certificate
2008-09-04
2010-12-07
Yoha, Connie C (Department: 2827)
Static information storage and retrieval
Read/write circuit
Bad bit
C365S230030, C365S230060
Reexamination Certificate
active
07848164
ABSTRACT:
A semiconductor memory device having a redundancy memory block and a cell array structure thereof, the semiconductor memory device having a plurality of sub-mats constituting a memory cell array, wherein each of the plurality of sub-mats includes a plurality of normal memory blocks of which each includes a plurality of normal memory cells and that are disposed adjacent one another; and at least one redundancy memory block having the same structure as the plurality of normal memory blocks, being disposed adjacent at least one of the plurality of normal memory blocks and having a plurality of redundancy memory cells for a row and column repair, thereby enhancing a redundancy efficiency.
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F. Chau & Associates LLC
Samsung Electronics Co,. Ltd.
Yoha Connie C
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