Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2007-06-28
2010-06-08
Phan, Trong (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S194000, C365S233100, C365S233110, C365S233160
Reexamination Certificate
active
07733723
ABSTRACT:
A semiconductor memory device includes a drive clock supplier and a signal generator. The drive clock supplier supplies a drive clock which is obtained by dividing an internal clock with a divide ratio, wherein the drive clock synchronizes with a rising edge of the internal clock with which an internal write signal synchronizes. The signal generator counts time corresponding to a write-recovery on the basis of the drive clock, to generate a precharge signal.
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Korean Office Action, with English translation, issued in Korean Patent Application No. KR 10-2006-0094137, mailed May 27, 2008.
Korean Notice of Allowance issued in Korean Patent Application No. KR 10-2006-0094137 dated on Nov. 26, 2008.
Hynix / Semiconductor Inc.
IP & T Law Firm PLC
Phan Trong
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