Semiconductor memory device having metal-insulator...

Details Semiconductor memory device having metal-insulator... Semiconductor memory device having metal-insulator...

2006-07-13

2008-10-21

Ho, Tu-Tu V (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S350000, C257S379000, C257S382000, C257SE27084, C257SE49002

Reexamination Certificate

active

07439566

ABSTRACT:
A semiconductor memory device may have a lower leakage current and/or higher reliability, e.g., a longer retention time and/or a shorter refresh time. The device may include a switching device and a capacitor. A source of the switching device may be connected to a first end of a metal-insulator transition film resistor, and at least one electrode of the capacitor may be connected to a second end of the metal-insulator transition film resistor. The metal-insulator transition film resistor may transition between an insulator and a conductor according to a voltage supplied to the first and second ends thereof.

REFERENCES:
patent: 5365095 (1994-11-01), Shono et al.
patent: 6426536 (2002-07-01), Misewich et al.
patent: 6624463 (2003-09-01), Kim

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