Static information storage and retrieval – Read/write circuit – Differential sensing
Reexamination Certificate
2004-11-05
2009-06-30
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Read/write circuit
Differential sensing
C365S212000, C365S207000
Reexamination Certificate
active
07554869
ABSTRACT:
A semiconductor memory device having internal circuits responsive to temperature data, in order to compensate an output characteristic change of the internal circuits and reduce power consumption depending on temperature change, and method thereof are disclosed. The semiconductor memory device may include a temperature sensing circuit and an internal circuit. The temperature sensing circuit may generate and output temperature data in response to ambient temperature of the semiconductor memory device. The internal circuit may adjust an output level of an output signal in response to the temperature data from the temperature sensing circuit.
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Hwang Min-Gyu
Kim Soo-Young
Rhee Sang-Jae
Harness Dickey & Pierce PLC
Hoang Huan
Samsung Electronics Co,. Ltd.
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