Semiconductor memory device having insulation patterns and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C438S596000

Reexamination Certificate

active

08084819

ABSTRACT:
Semiconductor memory devices and methods of forming semiconductor memory devices are provided. The methods may include forming insulation layers and cell gate layers that are alternately stacked on a substrate, forming an opening by successively patterning through the cell gate layers and the insulation layers, and forming selectively conductive barriers on sidewalls of the cell gate layers in the opening.

REFERENCES:
patent: 7271444 (2007-09-01), Furukawa et al.
patent: 2010/0155810 (2010-06-01), Kim et al.
patent: 10-093083 (1998-04-01), None
patent: 2007-180389 (2007-07-01), None
patent: 2007-317874 (2007-12-01), None

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