Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-12-30
2011-12-27
Lee, Calvin (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S596000
Reexamination Certificate
active
08084819
ABSTRACT:
Semiconductor memory devices and methods of forming semiconductor memory devices are provided. The methods may include forming insulation layers and cell gate layers that are alternately stacked on a substrate, forming an opening by successively patterning through the cell gate layers and the insulation layers, and forming selectively conductive barriers on sidewalls of the cell gate layers in the opening.
REFERENCES:
patent: 7271444 (2007-09-01), Furukawa et al.
patent: 2010/0155810 (2010-06-01), Kim et al.
patent: 10-093083 (1998-04-01), None
patent: 2007-180389 (2007-07-01), None
patent: 2007-317874 (2007-12-01), None
Hwang Ki-hyun
Kim Jingyun
Lee Myoung-bum
Lee Calvin
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
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