Semiconductor memory device having improved isolation between el

Details Semiconductor memory device having improved isolation between el Semiconductor memory device having improved isolation between el

1994-07-28

1996-03-12

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Capacitors

365145, 365174, 257295, G11C 1124

Patent

active

054992079

ABSTRACT:
With recent decreases in the size of semiconductor memories, isolation problems typically arise during fabrication of a capacitor for a high-capacity semiconductor memory device. To overcome this, arrangements are provided to improve the isolation between capacitor elements even if those elements are extremely close together. For example, if a material such as platinum is used as a capacitor bottom electrode, a thin layer of titanium oxide can be deposited before forming the platinum, to provide a structure in which the titanium oxide is on the bottom portion of the trench. A high-dielectric-constant insulator is then formed over that structure by the Chemical Vapor Deposition. The high-dielectric-constant insulator has a composition which satisfies the stoichiometric composition over the platinum and which has more titanium atoms than those of the stoichiometric composition on the trench bottom. The resulting non-stoichiometric composition layer formed on the trench bottom has a low dielectric constant and a high insulation to maintain electric insulation between adjoining bottom capacitor electrodes. Because of a low crystallization, moreover, a layer having a planarized morphology is formed.

REFERENCES:
patent: 5155573 (1992-10-01), Abe et al.
patent: 5321649 (1994-06-01), Lee et al.
patent: 5382817 (1995-01-01), Kashibara et al.

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