Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-05-20
2008-05-20
Nguyen, Cuong (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S296000, C257SE27086
Reexamination Certificate
active
11621617
ABSTRACT:
A semiconductor memory device includes a plurality of rows, each row comprising a plurality of active regions arranged at a pitch wherein the active regions in adjacent rows are shifted with respect to each other by one half of the pitch, wherein a distance between each active region in a row is equal to a distance between active regions in adjacent rows.
REFERENCES:
patent: 2002/0006734 (2002-01-01), Imai et al.
Goo Doo-Hoon
Han Woo-Sung
Lee Jung-Hyeon
Yeo Gi-Sung
F. Chau & Associates LLC
Nguyen Cuong
Samsung Electronics Co,. Ltd.
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