Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2007-08-07
2007-08-07
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S230060, C365S230030
Reexamination Certificate
active
11074722
ABSTRACT:
A semiconductor memory device is provided comprising precharge circuits corresponding to global data line pairs, but not a precharge circuit corresponding to a local data line pair. In a command waiting state, data line selection switches are controlled to be in a connected state, so that the local data line pair and the global data line pairs are precharged all together while being connected to each other. In a command executing state, one of the data line selection switches, the one being not required for command execution, is in an open state. Similarly, a semiconductor memory device comprising only a precharge circuit corresponding to a local data line pair can be provided.
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patent: 2000-030455 (2000-01-01), None
Matsushita Electric - Industrial Co., Ltd.
Weinberg Michael
Zarabian Amir
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