Semiconductor memory device having equalization terminated in di

Static information storage and retrieval – Read/write circuit – Precharge

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3652335, G11C 700, G11C 800

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053434323

ABSTRACT:
A semiconductor memory device includes an array of memory cells arranged in rows and columns; a plurality of word lines connected to the rows of the memory cells; a plurality of bit lines connected to the columns of the memory cells; word line selection means; bit line selection means; and equalizing means for equalizing the bit line to a desired voltage level in response to an address signal, and for terminating the equalization in response to change in a signal on a word line according to change in the address signal.

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"Static RAMs", Digest of Technical Papers of IEEE International Solid-State Circuit Conference, by Minato et al, pp. 222-223, 1984.

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