Semiconductor memory device having DRAM cell mode and...

Details Semiconductor memory device having DRAM cell mode and... Semiconductor memory device having DRAM cell mode and...

2011-07-19

2011-07-19

Smith, Zandra (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S324000, C257S325000, C257SE29300, C257SE29309

Reexamination Certificate

active

07982256

ABSTRACT:
A semiconductor memory device may have a DRAM cell mode and a non-volatile memory cell mode without a capacitor, including multiple transistors arranged in an array and having floating bodies, word lines connected to gate electrodes of the transistors, bit lines at a first side of the gate electrodes connected to drains of the transistors, source lines at a second side of the gate electrodes, different from the first side, and connected to sources of the transistors on the semiconductor substrate, and charge storage regions between the gate electrodes and the floating bodies.

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