Semiconductor memory device having data input/output circuit of

Static information storage and retrieval – Read/write circuit – Having particular data buffer or latch

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36518911, 326 83, G11C 700

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active

059532610

ABSTRACT:
Read drivers which are provided in correspondence to simultaneously selected plural bits of memory cells are wired-OR connected to internal read data buses which in turn are provided in correspondence to a plurality of memory cell arrays respectively. A test mode circuit is provided for the internal read data buses for detecting coincidence/incoincidence of logics of signal potentials on these internal read data bus lines. In a test operation, all read drivers are activated to read selected memory cell data on the corresponding internal read data bus lines.

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Mori et al., A 45ns 64Mb DRAM with a Merged Match-line Test Architecture 1991, IEEE International Solid-State Circuits Conference, pp. 110-111.

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