Semiconductor memory device having connected bit lines and...

Details Semiconductor memory device having connected bit lines and... Semiconductor memory device having connected bit lines and...

2006-07-12

2008-11-25

Smith, Zandra (Department: 2822)

Static information storage and retrieval

Addressing

Multiple port access

C365S189011, C365S221000

Reexamination Certificate

active

07457188

ABSTRACT:
Provided is a semiconductor memory device having connected bit lines and a data shifting method thereof. An embodiment of the semiconductor memory device includes a plurality of memory cell blocks each including a plurality of bit lines and a plurality of word lines, a plurality of sense amplifier blocks respectively disposed between the memory cell blocks, wherein each sense amplifier block includes a plurality of sense amplifier circuits corresponding to the bit lines, and a plurality of switches. The switches connect bit lines not sharing a sense amplifier block among bit lines of adjacent memory cell blocks between which the sense amplifier block is disposed, in response to a shift signal. Therefore, in the semiconductor memory device and the data shift method thereof, it is possible to easily shift data stored in memory cells connected to an arbitrary word line to memory cells connected to another arbitrary word line.

REFERENCES:
patent: 5600601 (1997-02-01), Murakami et al.
patent: 5777927 (1998-07-01), Takahashi et al.
patent: 5835436 (1998-11-01), Ooishi
patent: 6339817 (2002-01-01), Maesako et al.
patent: 6510098 (2003-01-01), Taylor
patent: 7009899 (2006-03-01), Lee
patent: 2003-123477 (2003-04-01), None
patent: 1999-0064902 (1999-08-01), None
English language abstract of Korean Publication No. 1999-0064902.
English language abstract of Japanese Publication No. 2003-123477.

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