Semiconductor memory device having capacitor for peripheral...

Details Semiconductor memory device having capacitor for peripheral... Semiconductor memory device having capacitor for peripheral...

2011-08-16

2011-08-16

Fahmy, Wael M (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S311000, C257SE27088

Reexamination Certificate

active

07999299

ABSTRACT:
Provided is a semiconductor memory device having peripheral circuit capacitors. In the semiconductor memory device, a first node is electrically connected to a plurality of lower electrodes of a plurality of capacitors in a peripheral circuit region to connect at least a portion of the capacitors in parallel. A second node is electrically connected to a plurality of upper electrodes of the capacitors in the peripheral circuit region to connect at least a portion of the capacitors in parallel. The first node is formed at substantially the same level as a bit line in a cell array region and is formed of the same material used to form the bit line.

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English language abstract of Korean Publication No. 1998-035297.
English language abstract of Korean Publication No. 2000-0045346.
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