Semiconductor memory device having capacitive storage therefor

Details Semiconductor memory device having capacitive storage therefor Semiconductor memory device having capacitive storage therefor

1998-09-21

2000-10-31

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257310, 257751, 257 77, 257 55, H01L 2904, H01L 2916, H01L 27105, H01L 2992

Patent

active

061406716

ABSTRACT:
A capacitor in a semiconductor device having a dielectric film formed of high dielectric material and a manufacturing method therefor are provided. The capacitor consists of electrodes including a dielectric film and an amorphous SiC layer. Thus, the diffusion of oxygen atoms through a grain boundary into an underlayer and the formation of an oxide layer on the surface of the SiC layer can both be prevented, providing for a highly reliable capacitor electrode and an equivalent oxide thickness which is no thicker than required.

REFERENCES:
patent: 4757028 (1988-07-01), Kondoh et al.
patent: 4844587 (1989-07-01), Morin
patent: 4847215 (1989-07-01), Hanaki et al.
patent: 5206787 (1993-04-01), Fujioka
patent: 5607874 (1997-03-01), Wang et al.
patent: 5641702 (1997-06-01), Imai et al.
patent: 5818071 (1998-10-01), Loboda
Electronics Lett. vol. 30 No. 9 pp. 688-689 Sakata et al "Amorphous . . . Structures", Apr. 28, 1994.

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