Semiconductor memory device having a word line drive circuit...

Details Semiconductor memory device having a word line drive circuit... Semiconductor memory device having a word line drive circuit...

2006-09-12

2006-09-12

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Differential sensing

C365S203000, C365S230060

Reexamination Certificate

active

07106645

ABSTRACT:
A semiconductor integrated circuit device includes bit lines, a word line, a dummy word line, a memory cell, a dummy cell, a dummy word line drive circuit and a word line drive circuit. A dummy word line drive circuit is connected to the dummy word line. The dummy word line drive circuit supplies a precharge potential level that is higher than a first power supply potential level and a second power supply potential level that is lower than the first power supply potential level to the dummy word line. The word line drive circuit is connected to the word line. The word line drive circuit supplies the second power supply potential level and the precharge potential level to the word line.

REFERENCES:
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patent: 6297999 (2001-10-01), Kato et al.
patent: 6525979 (2003-02-01), Kato
patent: 6549449 (2003-04-01), Takashima
patent: 60-242591 (1985-12-01), None
patent: 6-187781 (1994-07-01), None

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